0%
Uploading...

IPB042N10N3 G

Manufacturer:

Infineon

Mfr.Part #:

IPB042N10N3 G

Datasheet:
Description:

MOSFETs PG-TO263-3 SMD/SMT N-Channel number of channels:1 214 W 100 V Continuous Drain Current (ID):100 A 88 nC

ParameterValue
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Number of Pins3
Height4.7 mm
PackagingReel
Halogen FreeHalogen Free
Lead FreeContains Lead
Radiation HardeningNo
RoHSCompliant
Number of Elements1
Lifecycle StatusProduction (Last Updated: 10 months ago)
Power Dissipation214 W
Number of Channels1
Input capacitance6.32 nF
Continuous Drain Current (ID)100 A
Drain to Source Voltage (Vdss)100 V
Turn-On Delay Time27 ns
Turn-Off Delay Time48 ns
Rise Time59 ns
Gate Charge88 nC
Drain to Source Resistance3.6 mΩ
Max Junction Temperature (Tj)175 °C
Max Dual Supply Voltage100 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)100 V
On-State Resistance4.2 mΩ
Schedule B8541290080
Package Quantity1000
Gate to Source Threshold Voltage2 V
FET Type(Transistor Polarity)N-Channel

Stock: 1009

Distributors
pcbx
Unit Price$1.70217
Ext.Price$1.70217
QtyUnit PriceExt.Price
1$1.70217$1.70217
10$1.09517$10.95170
25$0.97898$24.47450
50$0.87511$43.75550
100$0.78226$78.22600
300$0.72040$216.12000
500$0.66343$331.71500
1000$0.56169$561.69000
3000$0.54520$1635.60000
5000$0.52920$2646.00000
10000$0.51553$5155.30000